Symposium : C-7 : Advances in Semiconductor Nanowires: Growth, Theory, Characterisation, Processing and Devices
Poster Session
  *Award marks are B:Bachelor, M:Master, D:Doctor, G:General
Entry No Presentation Date Award Presenter Affiliation Paper Title
Aug. 31Poster presentations
Clock Tower Hall, 2nd Floor 18:00-20:00 
Chair : Naoki Fukata NIMS 
2617   C7-P31-001 Aug. 31   *D Martin FRIEDL Laboratory of Semiconductor Materials, Ecole Polytechnique Federale de Lausanne, Lausanne Horizontally-Oriented InAs Nanowires Grown by MBE on GaAs
3150   C7-P31-002 Aug. 31   *D Robert T. HALLBERG Solid State Physics, Lund University Vertically aligned palladium seeded InAs nanowires growth on InAs (111)B by controlling the indium incorporation.
3176   C7-P31-003 Aug. 31   Erik K. MARTENSSON Solid State Physics, Lund University Side-by-side MOVPE study of GaAs nanowire growth using gold, silver and gold-silver alloys as seed materials
3213   C7-P31-004 Aug. 31   *D Sisir CHOWDHURY Indian Institute of Technology Kharagpur Indium Assisted Indium Gallium Arsenide nanowires Growth on Silicon Substrate by Metal Organic Chemical Vapor Deposition
3572   C7-P31-005 Aug. 31   Alexei BOURAVLEUV St.Petersburg Academic University RAS,Ioffe Physical Technical Institute,Institure for Analytical Instrumentations RAS,Aalto University Formation of GaAs nanowires on multi-layer graphene films
3813   C7-P31-006 Aug. 31   Alexei BOURAVLEUV St.Petersburg Academic University RAS,Ioffe Physical Technical Institute,Institure for Analytical Instrumentations RAS,Aalto University The use of colloidal nanoparticles for the MBE synthesis of GaAs nanowires
2880   C7-P31-007 Aug. 31   Kohei CHIBA Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University Integration of InGaAs nanowires on Si(111) for optical devices
3542   C7-P31-008 Aug. 31   Naoki FUKATA National Institute for Materials Science (NIMS) Hole Gas Accumulation in Selectively Doped Ge/Si Core-Shell Nanowires
2438   C7-P31-009 Aug. 31   *D K.K.M. Nalaka Priyadarsana SAMARAWEERA Auckland Bioengineering Institute, The University of Auckland, Private Bag 92100, Auckland, New Zealand Si/Ge Random Multilayer Nanowires with Ultra-low Thermal Conductivity
2980   C7-P31-010 Aug. 31   *G Thiyagu SUBRAMANI National Institute for Materials Science, Tsukuba, Ibaraki High efficiency silicon hybrid solar cells via energy management by employing nanocrystalline Si quantum dots and Si nanoholes
2982   C7-P31-011 Aug. 31   Naoki FUKATA International Center for Materials Nanoarchitectonics, National Institute for Materials Science Influence of Substrate Temperature on Structural, Optical and Electrical Properties of Al-catalyzed Silicon Nanowires for Photovoltaic Application
3112   C7-P31-012 Aug. 31   X.M ZHANG Tokyo Institute of Technology Sub-10 nm Indium Nanoparticles synthesis and their application in solar cell devices
2847   C7-P31-013 Aug. 31   *D K.K.M. Nalaka Priyadarsana SAMARAWEERA Auckland Bioengineering Institute, The University of Auckland, Private Bag 92100, Auckland, New Zealand Understanding Thermal Transport in Nanowires
3331   C7-P31-014 Aug. 31   *D JINGJING LIU Nanjing University Enhanced Photoluminescence from Ordered Er-Doped ZnO Nanobowl Arrays
3469   C7-P31-015 Aug. 31   *M Huai Sheng HSU School of National Pingtung University, Graduate school of University of Applied Physics The enhancement of magnetic circular dichroism near ZnO energy gap in AuCo coated ZnO nanorods
2240   C7-P31-016 Aug. 31   Li-Chia TIEN National Dong Hwa University, Shoufeng, Hualien, Taiwan Low Temperature Synthesis and UV Sensing of Zn2SnO4 Nanowires
2671   C7-P31-017 Aug. 31   *G Mieczyslaw Antoni PIETRZYK Institute of Physics, Polish Academy of Sciences Investigations of ZnO/ZnMgO quantum wells in ZnMgO nanocolumns grown on r- and c-plane Al2O3 substrate by MBE
2919   C7-P31-018 Aug. 31   Kyungchan MIN Dept. of Energy Systems Research, Ajou University, Suwon, 16499, Korea Crystal Growth of VO2 directly from Amorphous V2O5 on the Nanoporous Silicon Substrate
2098   C7-P31-019 Aug. 31   Han HUANG School of Physics and Electronics, Central South University, Changsha 410083, P. R. China Epitaxial Growth of Highly Oriented Metallic MoO2 Nanorods on C-sapphire(0001)
4015   C7-P31-020 Aug. 31   Qingqing DUAN Department of Physics and Astronomy, University of Sheffield Tuning the coupling strength and mode symmetry of photonic molecules using end-hole displacement