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*Award marks are B:Bachelor, M:Master, D:Doctor, G:General |
Entry No |
Presentation |
Date |
Award |
Presenter |
Affiliation |
Paper Title |
Aug. 29Poster presentations
Clock Tower Hall, 2nd Floor 18:00-20:00 |
Chair : Andreas Klein TU Darmstadt |
Chair : Yuzo Shigesato Aoyama Gakuin University |
2437 |
B1-P29-001 |
Aug. 29 |
|
Kenji YOSHINO |
Department of Applied Physics and Electronic Engineering, University of Miyazaki |
Low temperature growth of sprayed high quality Ga-doped ZnO thin films for CuInGaSe2 based solar cell |
3537 |
B1-P29-002 |
Aug. 29 |
|
Haibin WANG |
Research Center for Advanced Science and Technology, The Univereity of Tokyo |
Solution Processed Solar Cells Based on PbS Colloidal Quantum Dot / ZnO Nanowire Heterojunctions |
2744 |
B1-P29-003 |
Aug. 29 |
|
Takashi KOIDA |
National Institute of Advanced Industrial Science and Technology |
Carrier compensation effects induced by post-annealing treatments under low and high oxygen partial pressure |
2803 |
B1-P29-004 |
Aug. 29 |
*B |
ChangHun KIM |
School of Materials Science and Engineering, Kyungpook National University |
The effect of working pressure on the structural and electrical properties in the ZnO:Al,P thin films by the RF-magnetron sputtering |
2818 |
B1-P29-005 |
Aug. 29 |
*B |
Do-Kyum KIM |
School of Materials Science and Engineering, Kyungpook National University |
Evaporation-induced phase shift in In-Sn-Zn-O transparent conducting oxide system |
2859 |
B1-P29-006 |
Aug. 29 |
*B |
SangHyub KIM |
School of Materials Science and Engineering, Kyungpook National University |
Growth of In-Zn-Si-O Thin Films by RF Magnetron Sputtering |
2867 |
B1-P29-007 |
Aug. 29 |
*B |
Yong-Jae NA |
School of Materials Science and Engineering, Kyungpook National University |
Electrical and optical properties of In-Sn-Zn-O thin films grown by RF magnetron sputtering method. |
2988 |
B1-P29-008 |
Aug. 29 |
*M |
Takafumi KUBOTA |
University of Hyogo |
Fabrication of graphene and molybdenum oxide hybrid films for transparent conductive films |
3048 |
B1-P29-009 |
Aug. 29 |
*M |
Michitaka FUKUMOTO |
Department of Chemistry, School of Science, The University of Tokyo |
Fabrication of Textured Ta:SnO2 Transparent Conductive Films Using Self-Assembled SnO2 Nanoparticles |
3235 |
B1-P29-010 |
Aug. 29 |
*B |
Han-Sol KOO |
School of Materials Science and Engineering, Kyungpook National University |
Effect of oxygen pressure on electrical properties of ZnO:(Al, Sb) thin films grown by pulsed laser deposition |
3336 |
B1-P29-011 |
Aug. 29 |
*M |
Takumi SUGANE |
Graduate school of Science and Engineering, Aoyama Gakuin University |
Reactive sputter deposition of n-type and p-type SnOx films. |
3337 |
B1-P29-012 |
Aug. 29 |
|
Yuzo SHIGESATO |
Graduate School of Science and Engineering, Aoyama Gakuin University |
Study on the Zn-In-O-N (ZION) films deposited by dc or rf sputtering |
3338 |
B1-P29-013 |
Aug. 29 |
|
Yuzo SHIGESATO |
Graduate School of Science & Engineering, Aoyama Gakuin University |
Zn3N2 films deposited by dc or rf magnetron sputtering |
3483 |
B1-P29-014 |
Aug. 29 |
*M |
Yuki FUJITA |
Kindai University |
Substitutional Effect of Tin on Highly Conductive Barium Iron Vanadate Glass: Structure and Electrical Conductivity |
3553 |
B1-P29-015 |
Aug. 29 |
|
Andreas KLEIN |
TU Darmstadt |
Defect Modulation Doping of Transparent Conductive Oxides |
3398 |
B1-P29-016 |
Aug. 29 |
*M |
Shingo YAMAMOTO |
Graduate School of Science & Engineering, Aoyama Gakuin University |
Experimental investigation on crystallization of In2O3 based amorphous transparent conductive oxide films |
3555 |
B1-P29-017 |
Aug. 29 |
|
Andreas KLEIN |
TU Darmstadt |
Band Alignment Engineering at Cu2O/ZnO Heterointerfaces |
2853 |
B1-P29-018 |
Aug. 29 |
*D |
Minseok KIM |
University of Yamanashi |
Band alignment of amorphous Cd-In-O thin films |
2251 |
B1-P29-019 |
Aug. 29 |
|
Toshihiro OKAJIMA |
Kyushu Synchrotron Light Research Center |
Phase Stability of Sn doped TiO2 studied by X-ray Absorption Spectroscopy and First-Principles DFT Calculations |
3296 |
B1-P29-020 |
Aug. 29 |
*M |
YUKA KITAZAWA |
Graduate School of Science and Engineering, Aoyama Gakuin University |
Photocatalytic TiO2 films deposited on flexible polymer substrates by reactive sputtering |
3309 |
B1-P29-021 |
Aug. 29 |
*M |
Haruka YAMAMOTO |
Graduate School of Science & Engineering, Aoyama Gakuin University |
Crystal structure control of TiO2 films deposited by reactive sputtering |
3493 |
B1-P29-022 |
Aug. 29 |
*G |
Junjun JIA |
Graduate School of Science and Engineering, Aoyama Gakuin Univeristy |
Tailoring Crystal Structural of Sputtered TiO2 Film by Impurity Doping |
3471 |
B1-P29-023 |
Aug. 29 |
*M |
Hajime MIYAMOTO |
Kindai University |
Vanadate Glass applied to Bifunctional Oxygen Electrodes for Metal-Air rechargeable Battery |
2628 |
B1-P29-024 |
Aug. 29 |
*B |
Takanori TAKAHASHI |
National Institute of Technology, Tsuruoka College |
Fabrication of Amorphous SrTa2O6 Thin Films Using RF Magnetron Sputtering for Oxide Thin Film Transistor Applications |
2749 |
B1-P29-025 |
Aug. 29 |
|
Kenta SATO |
Graduate school of Engineering, Tokai Univ. |
Electrical and Optical properties of VO2 films deposited on conductive Al:ZnO layer |
3180 |
B1-P29-026 |
Aug. 29 |
*G |
Yuichiro YAMASHITA |
National Institute of Advanced Industrial Science and Technology |
Expansion of the scope of thermophysical property database for materials informatics |
3314 |
B1-P29-027 |
Aug. 29 |
*M |
Ayaka NAKANO |
Graduate School of Science and Engineering, Aoyama Gakuin University |
Characterization of heteroepitaxial grown ITO films deposited by sputtering |
3315 |
B1-P29-028 |
Aug. 29 |
*M |
Risa TATEWAKI |
Graduate School of Science and Engineering, Aoyama Gakuin University |
Dielectric constant and work function of tungsten oxide (WO3-x) films |
3320 |
B1-P29-029 |
Aug. 29 |
*M |
Yuji SHITAYANAGI |
Graduate school of Science & Engineering, Aoyama Gakuin University |
Gd and Mg-Y switching mirror materials deposited by sputtering |
3322 |
B1-P29-030 |
Aug. 29 |
*M |
Nanako ISHIGURO |
Graduate School of Science & Engineering, Aoyama Gakuin University |
Characterization of Si or Ti-doped diamond-like carbon films |
3328 |
B1-P29-031 |
Aug. 29 |
*M |
Ryo ISHIKAWA |
Graduate School of Science and Engineering Aoyama Gakuin University |
Structural characterization of GaN films deposited by rf sputtering using He, Ne, Ar, and Kr as sputtering gases |
3327 |
B1-P29-032 |
Aug. 29 |
*M |
Kaho HONDA |
Graduate School of Science and Engineering, Aoyama Gakuin University |
Optical, electrical, and thermophysical properties of heteroepitaxial grown Al-doped ZnO (AZO) films |
3350 |
B1-P29-033 |
Aug. 29 |
*M |
Mai SAITO |
Graduate school of Science and Engineering, Aoyama Gakuin University |
Deposition of Niobium Oxide films by reactive sputtering with the plasma emission monitoring system |
3356 |
B1-P29-034 |
Aug. 29 |
*M |
Satoshi MINEGISHI |
Graduate School of Science and Engineering, Aoyama Gakuin University |
Electrical and thermal conductivity change for epitaxial VO2 film at the metal-insulator phase transition |
3405 |
B1-P29-035 |
Aug. 29 |
|
Nobuto OKA |
Aoyama Gakuin University,Kindai University |
Reactive sputter deposition of Nb-doped TiO2 films using Ni-Ti alloy target with impedance control systems |
3382 |
B1-P29-036 |
Aug. 29 |
*M |
Takahiro SUZUKI |
Graduate School of Science and Engineering, Aoyama Gakuin University |
Thermal conductivity of Ti-doped diamond-like carbon thin films |
4020 |
B1-P29-037 |
Aug. 29 |
|
Jianhua SHI |
Shanghai Insitute of Microsystem and Information Technology Chinese Academy of Science,University of Chinese Academy of Sciences |
>150 cmV-1s-1 Carrier Mobility of Ultrathin Cerium Doped Indium Oxide film Prepared by Ion-plating Technique at Low Temperature |