| |
*Award marks are B:Bachelor, M:Master, D:Doctor, G:General |
| Entry No |
Keynote/
Invited |
Presentation |
Date |
Time to
start |
Time to
finish |
Award |
Presenter |
Affiliation |
Paper Title |
Aug. 28 14:00 - 16:00Room 1, Oral B-2(A)
North 3F #32 |
| Chair : Jin Kawakita NIMS |
| B-2 Symposium Opening Remarks |
Aug. 28 |
14:00 |
14:10 |
Prof. Toyohiro Chikyow, NIMS |
| 3025 |
Invited |
B2-I28-001 |
Aug. 28 |
14:10 |
14:40 |
|
Takahiro NAGATA |
Wpi-MANA, National Institute for Materials Science,JST-PRESTO |
Combinatorial thin film synthesis for developments of new high dielectric constant thin film materials |
| 3783 |
|
B2-O28-003 |
Aug. 28 |
14:40 |
14:55 |
*M |
Kiichi MATSUYAMA |
Muroran Institute of Technology |
Annealing Time Dependence of Sol-gel Derived CuGaO2 Films |
| Coffee Break |
Aug. 28 |
14:55 |
15:15 |
|
| 2106 |
|
B2-O28-004 |
Aug. 28 |
15:15 |
15:30 |
*G |
Mohamed B. ZAKARIA |
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044,Department of Chemistry, Faculty of Science, Tanta University, Tanta, Gharbeya 31527 |
Mesostructured SrTiO3/BaTiO3 Hybrid Films by Surfactant-Templated Sol-Gel Pathway with Robust Ferroelectricity |
| 2337 |
|
B2-O28-005 |
Aug. 28 |
15:30 |
15:45 |
|
Fanying MENG |
Shanghai institute of microsystem and information technology, Chinese academy of sciences |
Role of H2O in the characterization of the IWOH films prepared by reactive plasma deposition |
| 3566 |
|
B2-O28-006 |
Aug. 28 |
15:45 |
16:00 |
|
Atsushi KOHNO |
Department of Applied Physics, Faculty of Science, Fukuoka University |
Electrical Characteristics of a- and b-Axis-Oriented Bismuth Titanate Thin Films Formed on Si(100) Substrates by Chemical Solution Deposition |
Aug. 299:30 - 16:15Room 1, Oral B-2(B)
North 3F #32 |
| Chair : Atsushi Kohno Fukuoka University |
| 3588 |
Invited |
B2-I29-001 |
Aug. 29 |
09:30 |
10:00 |
|
Takuji HOSOI |
Graduate School of Engineering, Osaka University |
Single-Crystalline GeSn Formation on Transparent Substrate and its Optoelectronic Applications |
| 3063 |
|
B2-O29-002 |
Aug. 29 |
10:00 |
10:15 |
|
Wen-Cheng KE |
Department of Materials Science and Engineering, National Taiwan University of Science and Technology |
Influence of growth temperature of embedded indium-oxynitride quantum dots on contact performance of ITO on III-nitride light-emitting diodes |
| 2417 |
|
B2-O29-003 |
Aug. 29 |
10:15 |
10:30 |
*D |
Hongxia LI |
School of Materials Science and Engineering, Harbin Institute of Technology |
Damage mechanisms for the irradiated PEEK by low energy proton |
| 2369 |
|
B2-O29-004 |
Aug. 29 |
10:30 |
10:45 |
*D |
Md. Nazmul KAYES |
Graduate School of Engineering, Utsunomiya University |
Structural, Optical, and Photoelectrochemical Characterization of Thin Films of an Axially Chiral Bibenzo[c]phenanthrene Diol |
| 2456 |
|
B2-O29-005 |
Aug. 29 |
10:45 |
11:00 |
|
Jen-Sue CHEN |
Department of Materials Science and Engineering, National Cheng Kung University |
UV Photosensing Characters of Zinc-Tin Oxide (ZTO) Thin Film Transistors Fabricated via Spin-Coating and Inkjet Printing |
Aug. 2914:00 - 16:15Room 1, Oral B-2(C)
North 3F #32 |
| Chair : Toyohiro Chikyow NIMS |
| 3277 |
Invited |
B2-I29-006 |
Aug. 29 |
14:00 |
14:30 |
|
Zuimin JIANG |
Department of Physics, Fudan University, Shanghai 200433, China |
Controllable epitaxial growth and physical properties of low dimensional Si based materials |
| 2604 |
|
B2-O29-007 |
Aug. 29 |
14:30 |
14:45 |
*M |
Naofumi NISHIKAWA |
Dept. of Appl. Sci. for Electr. & Mat., Kyushu University |
Minority-carrier lifetimes in ultrananocrystalline diamond/amorphous carbon composite films prepared by coaxial arc plasma deposition |
| 2246 |
|
B2-O29-008 |
Aug. 29 |
14:45 |
15:00 |
*D |
Dan SHAN |
Nanjing University, Yangzhou Polytechnic Institute,China |
Improved Carrier Mobility in High-conductive Si Nanocrystals via B doping |
| Coffee Break |
Aug. 29 |
15:00 |
15:15 |
|
| 2763 |
|
B2-O29-009 |
Aug. 29 |
15:15 |
15:30 |
*D |
Hippolyte P.A.G. ASTIER |
Cavendish Laboratory, JJ Thomson Av. CB3 0HE, Cambridge, UK |
Electrically Contacting Self-Assembled PbS Nanocrystals Using Graphene |
| 3049 |
|
B2-O29-010 |
Aug. 29 |
15:30 |
15:45 |
*G |
Satish Laxman SHINDE |
National Institute for Materials Science |
Enhanced visible-light emission from Quantum dots sensitized GeO2/Ge perfect absorptive hetero-nano pyramids |
| 3735 |
|
B2-O29-011 |
Aug. 29 |
15:45 |
16:00 |
*M |
Shizuma ISHIDA |
Graduate Scool of Engineering, Nagoya University |
High Density Formation of Fe-silicide Nanodots and Their Magnetic Properties |
| 2870 |
|
B2-O28-002 |
Aug. 29 |
16:00 |
16:15 |
|
Nozomi NISHIZAWA |
Institute of Innovative Research, Tokyo Institute of Technology |
Growth of an ultra-thin crystalline AlOx tunnel barrier layer on GaAs-based surfaces for robust spin injection |
Aug. 309:30 - 11:00Room 1, Oral B-2(D)
North 3F #32 |
| Chair : Atsushi Kohno Fukuoka University |
| 3262 |
Invited |
B2-I30-001 |
Aug. 30 |
09:30 |
10:00 |
|
Martin L. GREEN |
NIST (National Institute of Standards and Technology) |
Applications of the Materials Genome Initiative to Advanced Thin Film Materials |
| 3570 |
|
B2-O30-002 |
Aug. 30 |
10:00 |
10:15 |
*D |
Atsunori TANAKA |
Materials Science Program, University of California San Diego |
When GaN and Si Tango, Thermal Mismatches are Overcome for Thick GaN-on-Si Vertical Power Devices |
| 3306 |
|
B2-O30-003 |
Aug. 30 |
10:15 |
10:30 |
*G |
Alexandra PALLA PAPAVLU |
National Institute for Lasers, Plasma, and Radiation Physics |
Direct laser writing of single walled carbon nanotubes for high performance gas sensors |
| 3796 |
|
B2-O30-004 |
Aug. 30 |
10:30 |
10:45 |
*D |
Anh Tung DOAN |
International Center for Materials, Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS),Department of Condensed Matter Physics, Hokkaido University |
Lithography-free planar perfect absorbers for wide acceptance angle and polarization-independent spectrally selective infrared devices |
| B-2 Symposium Closing Remarks |
Aug. 30 |
10:45 |
11:00 |
Prof. Toyohiro Chikyow, NIMS |
