Symposium :
Oral Session
  *Award marks are B:Bachelor, M:Master, D:Doctor, G:General
Entry No Keynote/
Presentation Date Time to
Time to
Award Presenter Affiliation Paper Title
Aug. 2813:00 - 15:10Amorphous Oxide Semiconductor and its application (1) 
North 3F #31  
Open Remarks (Andreas Klein) Aug. 28  13:00 13:10 Andreas Klein
Chair : Yuzo  Shigesato Aoyama Gakuin University 
3731   Keynote   B1-K28-001 Aug. 28   13:10 13:50 Toshio KAMIYA Laboratory for Materials and Structures, Tokyo Institute of Technology,Materials Research Center for Element Strategy, Tokyo Institute of Technology Present Status of Amorphous Oxide Semiconductors: From Materials Design to Devices
2524     B1-O28-002 Aug. 28   13:50 14:10 *G Takaaki MORIMOTO SASE of Waseda University Degradation of transfer characteristics of solution-processed IGZO thin-film transistors by UV irradiation and its recovery by heat treatment
2092   Invited   B1-I28-003 Aug. 28   14:10 14:40 Qun ZHANG Department of Materials Science, Fudan University Investigation of Hump Phenomenon in a-IGZO Thin-film Transistors
3353   Invited   B1-I28-004 Aug. 28   14:40 15:10 David C PAINE Brown University, School of Engineering Sharp-switching Top-gated Indium-zinc-oxide Thin Film Transistors Using a Novel in-situ Dielectric Formation Process
Coffee Break Aug. 28  15:10 15:30
Aug. 2815:30 - 17:10Amorphous Oxide Semiconductor and its application (2)
North 3F #31  
Chair : Andreas Klein Technische Universität Darmstadt 
3904   Invited   B1-I28-005 Aug. 28   15:30 16:00 Xingqiang Liu Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University,Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University Understand the Role of Hydrogen doping ZnO-based Thin Film Transistors
3134     B1-O28-006 Aug. 28   16:00 16:20 *D SHIJEESH METHATTEL RAMAN Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology,Cochin 682022, Kerala, India Effect of post annealing on the negative gate-bias illumination instability of zinc-tin-oxide thin film transistor
2517     B1-O28-007 Aug. 28   16:20 16:40 *M Ha HOANG Kwansei Gakuin University Characterization of doped In2O3 thin films by spin-coating technique
2193   Invited   B1-I28-008 Aug. 28   16:40 17:10 Sang Yeol LEE Department of Semiconductor Engineering, Cheongju University Thin film logic circuits with Si-Zn-Sn-O thin film transistor
Aug. 2910:00 - 11:30Development on New Amorphous Oxide Semiconductors
North 3F #31  
Chair : Naoomi Yamada Chubu University 
3178   Invited   B1-I29-001 Aug. 29   10:00 10:30 Yasushi HIROSE The University of Tokyo,KAST Recent Progress in Transition Metal Oxynitride Semiconductor Thin Films
2374   Invited   B1-I29-002 Aug. 29   10:30 11:00 Hiroshi YANAGI Graduate Faculty of Interdisciplinary Research, University of Yamanashi,Interdisciplinary Graduate School of Medicine & Engineering, University of Yamanashi Transparent Semiconducting amorphous cadmium–gallium–tin oxide films: Effect of Water Vapor during deposition
3416   Invited   B1-I29-003 Aug. 29   11:00 11:30 Naho ITAGAKI Graduate School of Information Science and Electrical Engineering, Kyushu University Inverse Stranski-Krastanov Growth of Single Crystalline ZnO-Based Semiconductors on Lattice Mismatched Substrates
Aug. 2913:30 - 15:30Transparent Conductive Oxide Materials
North 3F #31  
Chair : Yasushi HIROSE The University of Tokyo 
3127   Invited   B1-I29-004 Aug. 29   13:30 14:00 Taro HITOSUGI Tokyo Institute of Technology Transparent Superconductor LiTi2O4
3418     B1-O29-005 Aug. 29   14:00 14:20 Tetsuya YAMAMOTO Research Institute, Kochi University of Technology Factors Limiting Carrier Transport of Al-doped ZnO Conductive Films
2079     B1-O29-006 Aug. 29   14:20 14:40 *G X. CAO Department of Applied Chemistry, Chubu University Near-Infrared Transparent Mo-doped In2O3 Thin Films Deposited by Atmospheric-Pressure Mist Chemical Vapor Deposition Technique
2871     B1-O29-007 Aug. 29   14:40 15:00 Takeo OHSAWA National Institute for Materials Science Impurities, Defects, and Electronic Transport Properties in Semiconducting ZnO Single Crystals
2076   Invited   B1-I29-008 Aug. 29   15:00 15:30 Takashi KOIDA Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology In2O3-based transparent conducting oxide films with high electron mobility: potential of the materials, reliability, and use in photovoltaics
Aug. 2915:30 - 17:30Transparent Conductive Oxide Materials
North 3F #31  
Chair : Takashi  KOIDA National Institute of Advanced Industrial Science and Technology (AIST) 
3812   Invited   B1-I29-009 Aug. 29   15:30 16:00 *G Monica MORALES-MASIS Ecole Polytechnique Federale de Lausanne (EPFL) Advances in the development of transparent conductive oxide electrodes for high-efficiency optoelectronics
3519     B1-O29-010 Aug. 29   16:00 16:20 Philipp WENDEL Institute of Materials Science, Technical University Darmstadt Polarization dependence of ZnO Schottky barrier heights
2822     B1-O29-011 Aug. 29   16:20 16:40 *M Yoshihito YAMAGATA Hosei University Growth, Electronic States, and Junction Properties of Polarity-Controlled ZnO Thin Films on Silicon Substrates
3905     B1-O29-012 Aug. 29   16:40 17:00 S. NAKAO Univ. of Tokyo, Bunkyo, Tokyo, Japan,KAST High Mobility Approaching the Intrinsic Limit in Ta-doped SnO2 Films Epitaxially Grown on TiO2 (001) Substrates
2269   Invited   B1-I29-013 Aug. 29   17:00 17:30 Shijie WANG Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research) Transparent conductive Ga-doped ZnO: from thin film growth to device applications
Aug. 309:30 - 11:40Theoretical Calculation based Material Design
North 3F #31  
Chair : Junjun Jia Aoyama Gakuin University 
2209   Keynote   B1-K30-001 Aug. 30   09:30 10:10 Fumiyasu OBA Laboratory for Materials and Structures and Materials Research Center for Element Strategy, Tokyo Institute of Technology,Center for Materials Research by Information Integration, National Institute for Materials Science In Silico Design and Exploration of Novel Nitride Semiconductors
Chair : Fumiyasu  OBA Tokyo Institute of Technology 
3816   Invited   B1-I30-002 Aug. 30   10:10 10:40 Julia MEDVEDEVA Missouri S&T Defect Dynamics in Amorphous Oxide Semiconductors
2166   Invited   B1-I30-003 Aug. 30   10:40 11:10 Kee Joo CHANG Department of Physics, Korea Advanced Institute of Science and Technology Development and Applications of an Ab Initio Materials Design Scheme based on Conformational Space Annealing
4018   Invited   B1-I30-004 Aug. 30   11:10 11:40 Stephan LANY National Renewable Energy Laboratory, Golden, CO 80401 Computational materials design and discovery in oxides and nitrides
Aug. 3013:30 - 15:10 Experiment Based Material Design
North 3F #31  
Chair : Qun Zhang  Fudan University 
3828   Invited   B1-I30-005 Aug. 30   13:30 14:00 John D PERKINS National Renewable Energy Laboratory Materials by Design for Energy Applications
3404   Invited   B1-I30-006 Aug. 30   14:00 14:30 Nobuto OKA Kindai University Thermophysical Properties of Transparent Conductive Oxide Thin Films
3549     B1-O30-007 Aug. 30   14:30 14:50 *G Junjun JIA Graduate School of Science and Engineering, Aoyama Gakuin Univeristy Characterization of Layered In2O3(ZnO)m Films
3819     B1-O30-008 Aug. 30   14:50 15:10 Joerg J SCHNEIDER Technische Universitaet Darmstadt From Inorganic Molecules to Functional Materials: A Liasson towards Electronic Device Applications
Aug. 3110:00 - 11:30Development on P-Type Semiconducting Materials
North 3F #31  
Chair : John Perkins National Renewable Energy Laboratory (NREL) 
2134   Invited   B1-I31-001 Aug. 31   10:00 10:30 Christian ELSAESSER Fraunhofer Institute for Mechanics of Materials IWM, Freiburg,University of Freiburg, FMF Mechanisms for p-type conduction in ZnO, (Zn,Mg)O, and related oxide semiconductors
2052   Invited   B1-I31-002 Aug. 31   10:30 11:00 Naoomi YAMADA Department of Applied Chemistry, Chubu University Transparent P-Type Semiconducting Copper Iodide Thin Films for Transparent Electronics
3826   Invited   B1-I31-003 Aug. 31   11:00 11:30 *G Kentaro KANEKO Kyoto University,FLOSFIA Inc. Explore of corundum-structured alloys with novel functions.
Aug. 3113:30 - 15:50Novel Approach to Fabricate the TCO or TAOS Materials
North 3F #31  
Chair : Hiroshi  YANAGI University of Yamanashi 
2162   Invited   B1-I31-004 Aug. 31   13:30 13:50 Norifumi FUJIMURA Graduate School of Eng., Osaka Prefecture University Novel chemical vapor deposition process of oxide thin films using nonequilibrium plasma generated near atmospheric pressure
2432     B1-O31-005 Aug. 31   13:50 14:20 *M Himeka TOMINAGA Department of Applied Physics and Electronic Engineering, University of Miyazaki Electrical characterization of Ga-doped ZnMgO thin films grown by spin-coated method
2692     B1-O31-006 Aug. 31   14:20 14:40 M OZENBAS Middle East Technical University A Comparative Study on Deposition of FTO Thin Films by Conventional and Ultrasonic Spray Pyrolysis Methods for Dye Sensitized Solar Modules
2420     B1-O31-007 Aug. 31   14:40 15:00 *G Mary Donnabelle Lirio BALELA Sustainable Electronic Materials Group, Department of Mining, Metallurgical and Materials Engineering, University of the Philippines, 1101 Diliman, Quezon City, Philippines Formation of Ultralong Cu and Cu-Ni Nanowires by Hydrothermal Method
Coffee Break Aug. 31  15:00 15:30
Chair : Andreas Klein Technische Universität Darmstadt 
3814   Invited   B1-I31-008 Aug. 31   15:30 16:00 Akira OHTOMO Department of Chemical Science and Engineering, Tokyo Institute of Technology,Materials Research Center for Element Strategy, Tokyo Institute of Technology Graphoepitaxy of In2O3 by quasi-VLS growth
3906   Invited   B1-I31-009 Aug. 31   16:00 16:30 D. GLOESS Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP Process control and process parameters to influence layer properties in pulse magnetron sputtering
Sep. 19:00 - 12:00Development on Functional Materials
North 3F #31  
Chair : Norifumi  FUJIMURA Osaka Prefecture University 
3147   Invited   B1-I01-001 Sep. 1   09:00 09:30 Takaya KUBO Research Center for Advanced Science and Technology, The Univ. of Tokyo Quantum Dot-based Solar Cells with Highly Transparent Conductive Oxides for Enhanced Photocurrent in the Short-wavelength Infrared Region
3032     B1-O01-002 Sep. 1   09:30 09:50 *D Xiaohu HUANG Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) Photocatalytic TCO Films towards Self-Cleaning Multifunctional Coating
2566     B1-O01-003 Sep. 1   09:50 10:10 *M Hani Esmael JAN Kwansei Gakuin University Structural characteristics of In-Si-O films fabricated via solution processing
3463     B1-O01-004 Sep. 1   10:10 10:30 *M Retno MIRANTI Department of Electronic Chemistry, Tokyo Institute of Technology Solution-Processed Mn-doped Zinc Oxide Films Having Magnetic and Transparent-Conductive Properties
Coffee Break Sep. 1  10:30 10:45
Chair : Nobuto Oka Kindai University 
2195   Invited   B1-I01-005 Sep. 1   10:45 11:15 Kazushige UEDA Kyushu Institute of Technology Photo-, Cathodo-, Electro-luminescence of Lanthanide Doped Perovskite-type Oxide Thin Films
4001   Invited   B1-I01-006 Sep. 1   11:15 11:45 Pung-Keun SONG Department of Materials Science and Engineering, Pusan National University Application for Amorphous Transparent Conductive Oxide Films
Closing Remarks Sep. 1  11:45 11:55 Yuzo Shigesato