|
*Award marks are B:Bachelor, M:Master, D:Doctor, G:General |
Entry No |
Keynote/
Invited |
Presentation |
Date |
Time to
start |
Time to
finish |
Award |
Presenter |
Affiliation |
Paper Title |
Aug. 2813:00 - 15:10Amorphous Oxide Semiconductor and its application (1)
North 3F #31 |
Open Remarks (Andreas Klein) |
Aug. 28 |
13:00 |
13:10 |
Andreas Klein |
Chair : Yuzo Shigesato Aoyama Gakuin University |
3731 |
Keynote |
B1-K28-001 |
Aug. 28 |
13:10 |
13:50 |
|
Toshio KAMIYA |
Laboratory for Materials and Structures, Tokyo Institute of Technology,Materials Research Center for Element Strategy, Tokyo Institute of Technology |
Present Status of Amorphous Oxide Semiconductors: From Materials Design to Devices |
2524 |
|
B1-O28-002 |
Aug. 28 |
13:50 |
14:10 |
*G |
Takaaki MORIMOTO |
SASE of Waseda University |
Degradation of transfer characteristics of solution-processed IGZO thin-film transistors by UV irradiation and its recovery by heat treatment |
2092 |
Invited |
B1-I28-003 |
Aug. 28 |
14:10 |
14:40 |
|
Qun ZHANG |
Department of Materials Science, Fudan University |
Investigation of Hump Phenomenon in a-IGZO Thin-film Transistors |
3353 |
Invited |
B1-I28-004 |
Aug. 28 |
14:40 |
15:10 |
|
David C PAINE |
Brown University, School of Engineering |
Sharp-switching Top-gated Indium-zinc-oxide Thin Film Transistors Using a Novel in-situ Dielectric Formation Process |
Coffee Break |
Aug. 28 |
15:10 |
15:30 |
|
Aug. 2815:30 - 17:10Amorphous Oxide Semiconductor and its application (2)
North 3F #31 |
Chair : Andreas Klein Technische Universität Darmstadt |
3904 |
Invited |
B1-I28-005 |
Aug. 28 |
15:30 |
16:00 |
|
Xingqiang Liu |
Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University,Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University |
Understand the Role of Hydrogen doping ZnO-based Thin Film Transistors |
3134 |
|
B1-O28-006 |
Aug. 28 |
16:00 |
16:20 |
*D |
SHIJEESH METHATTEL RAMAN |
Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology,Cochin 682022, Kerala, India |
Effect of post annealing on the negative gate-bias illumination instability of zinc-tin-oxide thin film transistor |
2517 |
|
B1-O28-007 |
Aug. 28 |
16:20 |
16:40 |
*M |
Ha HOANG |
Kwansei Gakuin University |
Characterization of doped In2O3 thin films by spin-coating technique |
2193 |
Invited |
B1-I28-008 |
Aug. 28 |
16:40 |
17:10 |
|
Sang Yeol LEE |
Department of Semiconductor Engineering, Cheongju University |
Thin film logic circuits with Si-Zn-Sn-O thin film transistor |
Aug. 2910:00 - 11:30Development on New Amorphous Oxide Semiconductors
North 3F #31 |
Chair : Naoomi Yamada Chubu University |
3178 |
Invited |
B1-I29-001 |
Aug. 29 |
10:00 |
10:30 |
|
Yasushi HIROSE |
The University of Tokyo,KAST |
Recent Progress in Transition Metal Oxynitride Semiconductor Thin Films |
2374 |
Invited |
B1-I29-002 |
Aug. 29 |
10:30 |
11:00 |
|
Hiroshi YANAGI |
Graduate Faculty of Interdisciplinary Research, University of Yamanashi,Interdisciplinary Graduate School of Medicine & Engineering, University of Yamanashi |
Transparent Semiconducting amorphous cadmium–gallium–tin oxide films: Effect of Water Vapor during deposition |
3416 |
Invited |
B1-I29-003 |
Aug. 29 |
11:00 |
11:30 |
|
Naho ITAGAKI |
Graduate School of Information Science and Electrical Engineering, Kyushu University |
Inverse Stranski-Krastanov Growth of Single Crystalline ZnO-Based Semiconductors on Lattice Mismatched Substrates |
Aug. 2913:30 - 15:30Transparent Conductive Oxide Materials
North 3F #31 |
Chair : Yasushi HIROSE The University of Tokyo |
3127 |
Invited |
B1-I29-004 |
Aug. 29 |
13:30 |
14:00 |
|
Taro HITOSUGI |
Tokyo Institute of Technology |
Transparent Superconductor LiTi2O4 |
3418 |
|
B1-O29-005 |
Aug. 29 |
14:00 |
14:20 |
|
Tetsuya YAMAMOTO |
Research Institute, Kochi University of Technology |
Factors Limiting Carrier Transport of Al-doped ZnO Conductive Films |
2079 |
|
B1-O29-006 |
Aug. 29 |
14:20 |
14:40 |
*G |
X. CAO |
Department of Applied Chemistry, Chubu University |
Near-Infrared Transparent Mo-doped In2O3 Thin Films Deposited by Atmospheric-Pressure Mist Chemical Vapor Deposition Technique |
2871 |
|
B1-O29-007 |
Aug. 29 |
14:40 |
15:00 |
|
Takeo OHSAWA |
National Institute for Materials Science |
Impurities, Defects, and Electronic Transport Properties in Semiconducting ZnO Single Crystals |
2076 |
Invited |
B1-I29-008 |
Aug. 29 |
15:00 |
15:30 |
|
Takashi KOIDA |
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology |
In2O3-based transparent conducting oxide films with high electron mobility: potential of the materials, reliability, and use in photovoltaics |
Aug. 2915:30 - 17:30Transparent Conductive Oxide Materials
North 3F #31 |
Chair : Takashi KOIDA National Institute of Advanced Industrial Science and Technology (AIST) |
3812 |
Invited |
B1-I29-009 |
Aug. 29 |
15:30 |
16:00 |
*G |
Monica MORALES-MASIS |
Ecole Polytechnique Federale de Lausanne (EPFL) |
Advances in the development of transparent conductive oxide electrodes for high-efficiency optoelectronics |
3519 |
|
B1-O29-010 |
Aug. 29 |
16:00 |
16:20 |
|
Philipp WENDEL |
Institute of Materials Science, Technical University Darmstadt |
Polarization dependence of ZnO Schottky barrier heights |
2822 |
|
B1-O29-011 |
Aug. 29 |
16:20 |
16:40 |
*M |
Yoshihito YAMAGATA |
Hosei University |
Growth, Electronic States, and Junction Properties of Polarity-Controlled ZnO Thin Films on Silicon Substrates |
3905 |
|
B1-O29-012 |
Aug. 29 |
16:40 |
17:00 |
|
S. NAKAO |
Univ. of Tokyo, Bunkyo, Tokyo, Japan,KAST |
High Mobility Approaching the Intrinsic Limit in Ta-doped SnO2 Films Epitaxially Grown on TiO2 (001) Substrates |
2269 |
Invited |
B1-I29-013 |
Aug. 29 |
17:00 |
17:30 |
|
Shijie WANG |
Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research) |
Transparent conductive Ga-doped ZnO: from thin film growth to device applications |
Aug. 309:30 - 11:40Theoretical Calculation based Material Design
North 3F #31 |
Chair : Junjun Jia Aoyama Gakuin University |
2209 |
Keynote |
B1-K30-001 |
Aug. 30 |
09:30 |
10:10 |
|
Fumiyasu OBA |
Laboratory for Materials and Structures and Materials Research Center for Element Strategy, Tokyo Institute of Technology,Center for Materials Research by Information Integration, National Institute for Materials Science |
In Silico Design and Exploration of Novel Nitride Semiconductors |
Chair : Fumiyasu OBA Tokyo Institute of Technology |
3816 |
Invited |
B1-I30-002 |
Aug. 30 |
10:10 |
10:40 |
|
Julia MEDVEDEVA |
Missouri S&T |
Defect Dynamics in Amorphous Oxide Semiconductors |
2166 |
Invited |
B1-I30-003 |
Aug. 30 |
10:40 |
11:10 |
|
Kee Joo CHANG |
Department of Physics, Korea Advanced Institute of Science and Technology |
Development and Applications of an Ab Initio Materials Design Scheme based on Conformational Space Annealing |
4018 |
Invited |
B1-I30-004 |
Aug. 30 |
11:10 |
11:40 |
|
Stephan LANY |
National Renewable Energy Laboratory, Golden, CO 80401 |
Computational materials design and discovery in oxides and nitrides |
Aug. 3013:30 - 15:10 Experiment Based Material Design
North 3F #31 |
Chair : Qun Zhang Fudan University |
3828 |
Invited |
B1-I30-005 |
Aug. 30 |
13:30 |
14:00 |
|
John D PERKINS |
National Renewable Energy Laboratory |
Materials by Design for Energy Applications |
3404 |
Invited |
B1-I30-006 |
Aug. 30 |
14:00 |
14:30 |
|
Nobuto OKA |
Kindai University |
Thermophysical Properties of Transparent Conductive Oxide Thin Films |
3549 |
|
B1-O30-007 |
Aug. 30 |
14:30 |
14:50 |
*G |
Junjun JIA |
Graduate School of Science and Engineering, Aoyama Gakuin Univeristy |
Characterization of Layered In2O3(ZnO)m Films |
3819 |
|
B1-O30-008 |
Aug. 30 |
14:50 |
15:10 |
|
Joerg J SCHNEIDER |
Technische Universitaet Darmstadt |
From Inorganic Molecules to Functional Materials: A Liasson towards Electronic Device Applications |
Aug. 3110:00 - 11:30Development on P-Type Semiconducting Materials
North 3F #31 |
Chair : John Perkins National Renewable Energy Laboratory (NREL) |
2134 |
Invited |
B1-I31-001 |
Aug. 31 |
10:00 |
10:30 |
|
Christian ELSAESSER |
Fraunhofer Institute for Mechanics of Materials IWM, Freiburg,University of Freiburg, FMF |
Mechanisms for p-type conduction in ZnO, (Zn,Mg)O, and related oxide semiconductors |
2052 |
Invited |
B1-I31-002 |
Aug. 31 |
10:30 |
11:00 |
|
Naoomi YAMADA |
Department of Applied Chemistry, Chubu University |
Transparent P-Type Semiconducting Copper Iodide Thin Films for Transparent Electronics |
3826 |
Invited |
B1-I31-003 |
Aug. 31 |
11:00 |
11:30 |
*G |
Kentaro KANEKO |
Kyoto University,FLOSFIA Inc. |
Explore of corundum-structured alloys with novel functions. |
Aug. 3113:30 - 15:50Novel Approach to Fabricate the TCO or TAOS Materials
North 3F #31 |
Chair : Hiroshi YANAGI University of Yamanashi |
2162 |
Invited |
B1-I31-004 |
Aug. 31 |
13:30 |
13:50 |
|
Norifumi FUJIMURA |
Graduate School of Eng., Osaka Prefecture University |
Novel chemical vapor deposition process of oxide thin films using nonequilibrium plasma generated near atmospheric pressure |
2432 |
|
B1-O31-005 |
Aug. 31 |
13:50 |
14:20 |
*M |
Himeka TOMINAGA |
Department of Applied Physics and Electronic Engineering, University of Miyazaki |
Electrical characterization of Ga-doped ZnMgO thin films grown by spin-coated method |
2692 |
|
B1-O31-006 |
Aug. 31 |
14:20 |
14:40 |
|
M OZENBAS |
Middle East Technical University |
A Comparative Study on Deposition of FTO Thin Films by Conventional and Ultrasonic Spray Pyrolysis Methods for Dye Sensitized Solar Modules |
2420 |
|
B1-O31-007 |
Aug. 31 |
14:40 |
15:00 |
*G |
Mary Donnabelle Lirio BALELA |
Sustainable Electronic Materials Group, Department of Mining, Metallurgical and Materials Engineering, University of the Philippines, 1101 Diliman, Quezon City, Philippines |
Formation of Ultralong Cu and Cu-Ni Nanowires by Hydrothermal Method |
Coffee Break |
Aug. 31 |
15:00 |
15:30 |
|
Chair : Andreas Klein Technische Universität Darmstadt |
3814 |
Invited |
B1-I31-008 |
Aug. 31 |
15:30 |
16:00 |
|
Akira OHTOMO |
Department of Chemical Science and Engineering, Tokyo Institute of Technology,Materials Research Center for Element Strategy, Tokyo Institute of Technology |
Graphoepitaxy of In2O3 by quasi-VLS growth |
3906 |
Invited |
B1-I31-009 |
Aug. 31 |
16:00 |
16:30 |
|
D. GLOESS |
Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP |
Process control and process parameters to influence layer properties in pulse magnetron sputtering |
Sep. 19:00 - 12:00Development on Functional Materials
North 3F #31 |
Chair : Norifumi FUJIMURA Osaka Prefecture University |
3147 |
Invited |
B1-I01-001 |
Sep. 1 |
09:00 |
09:30 |
|
Takaya KUBO |
Research Center for Advanced Science and Technology, The Univ. of Tokyo |
Quantum Dot-based Solar Cells with Highly Transparent Conductive Oxides for Enhanced Photocurrent in the Short-wavelength Infrared Region |
3032 |
|
B1-O01-002 |
Sep. 1 |
09:30 |
09:50 |
*D |
Xiaohu HUANG |
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) |
Photocatalytic TCO Films towards Self-Cleaning Multifunctional Coating |
2566 |
|
B1-O01-003 |
Sep. 1 |
09:50 |
10:10 |
*M |
Hani Esmael JAN |
Kwansei Gakuin University |
Structural characteristics of In-Si-O films fabricated via solution processing |
3463 |
|
B1-O01-004 |
Sep. 1 |
10:10 |
10:30 |
*M |
Retno MIRANTI |
Department of Electronic Chemistry, Tokyo Institute of Technology |
Solution-Processed Mn-doped Zinc Oxide Films Having Magnetic and Transparent-Conductive Properties |
Coffee Break |
Sep. 1 |
10:30 |
10:45 |
|
Chair : Nobuto Oka Kindai University |
2195 |
Invited |
B1-I01-005 |
Sep. 1 |
10:45 |
11:15 |
|
Kazushige UEDA |
Kyushu Institute of Technology |
Photo-, Cathodo-, Electro-luminescence of Lanthanide Doped Perovskite-type Oxide Thin Films |
4001 |
Invited |
B1-I01-006 |
Sep. 1 |
11:15 |
11:45 |
|
Pung-Keun SONG |
Department of Materials Science and Engineering, Pusan National University |
Application for Amorphous Transparent Conductive Oxide Films |
Closing Remarks |
Sep. 1 |
11:45 |
11:55 |
Yuzo Shigesato |