Symposia & Program

C-7 Advances in Semiconductor Nanowires: Growth, Theory, Characterisation, Processing and Devices
- 1st Bilateral MRS-J / Australian-MRS (A-MRS) symposium -

Organizers:

Representative

Prof. Chennupati Jagadish	Australian National University Canberra

Correspondence

Dr. Naoki Fukata	International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Co-Organizers

Dr. Naoki Fukata	International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
Prof. Xiong Qihua	School of Physical and Mathematical Sciences 21 Nanyang Link Nanyang Technological University Singapore 637371
Prof. Dayeh Shadi	Department of Electrical and Computer Engineering University of California San Diego, USA
Prof. Parkinson Patrick	School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
Prof. Luca Marta De	Marta De Luca Department of Physics University of Basel Klingelbergstrasse 82 4056 Basel, Switzerland

Scope:

Semiconductor nanowires are considered as building blocks for the next generation electronics and photonics. Their large surface to volume ratio is also attractive for sensing and energy harvesting applications, such as solar cells, photocatalysis. This symposium covers nanowires of a broad range of semiconductors such as group IV, IV-IV, III-V, II-VI, II-V materials, oxides, chalcogenides and their heterostructures. Symposium will focus on recent advances in the nanowire field including nanobelts, nanosheets. Purpose of the symposium is bring together nanowire community to share advances in the field and to enhance collaborations and interactions with industry.

Topics:

1. Growth, synthesis of 1D nanostructures e.g nanowires, nanobelts and nanosheets, hierarchial structures, e.g. networks, arrays, ternary and quaternary alloys, doping

2. Theory and simulations including growth, properties and devices

3. Structural, electrical, optical, thermal, electrochemical and mechanical properties of nanowires

4. Electronic devices including transistors, sensors, MEMS, memories

5. Optoelectronic devices such as lasers, LEDs, photodetectors, optical switches, nonlinear optical devices, plasmonics

6. Energy harvesting devices such as solar cells, thermoelectric devices, batteries, photocatalysis

7. Sensors and actuators such as chemical, biomedical, environmental sensors, sensors for internet of things, MEMS sensors, microfluidics

8. Biological applications including neural probes, cell stimulation, cell growth

9. Assembly and integration of nanowires, hybrid organic and inorganic nanowires for flexible electronics

Keynote Speakers & Invited Speakers (tentative)

Prof. Yasuhiko Arakawa	The University of Tokyo, Japan
Prof. Eric Bakkers	TU Eindhoven, Netherlands
Prof. Sonia Conesa-Boj	TU Delft, Netherlands
Prof. Kimberly Dick	Lund University, Sweden
Prof. Vladimir Dubrovskii	Ioffe Institute, Russia Advances in theory of III-V nanowire growth
Prof. Sergey Frolov	Univ. Pittisburgh, US
Dr. Hannah Joyce	Cambridge University, United Kingdom
Dr. Kenichi Kawaguchi	Fujitsu Lab.& The University of Tokyo III-V nanowires for RF energy harvesting
Prof. Xiuling Li	University of Illinois Urbana Champaign, US
Prof. Paul McIntyre	Stanford University, US Nanowire Structure, Luminescence Characteristics and Carrier Dynamics in the SiGe, Ge and GeSn Systems
Prof. Won Il Park	Hanyang University, South Korea
Prof. Antonio Polimeni	University of Rome, Italy
Dr. Ricardo Rurali	Institut de Ciència de Materials de Barcelona, Spain
Prof. Hadas Shtrikman	Weizmann Institute, Israel
Prof. Katsuhiro Tomioka	Hokkaido University, Japan Vertical III-V nanowires on Si and transistor applications
Prof. Takashi Yanagida	Kyusyu University, Japan
Prof. Peidong Yang	UC Berkeley, US
Dr. Jinkyoung Yoo	Los Alamos National Laboratory, US
Dr. Guoqiang Zhang	NTT Basic Research Lab, Japan InP/InAs heterostructure nanowires by self-catalyzed vapor-liquid-solid mode