Symposia & Program

C-7 Advances in Semiconductor Nanowires: Growth, Theory, Characterisation, Processing and Devices
- 1st Bilateral MRS-J / A-MRS symposium -



Prof. Chennupati Jagadish Australian National University Canberra


Dr. Naoki Fukata International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan


Dr. Naoki Fukata International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
Prof. Xiong Qihua School of Physical and Mathematical Sciences 21 Nanyang Link Nanyang Technological University Singapore 637371
Prof. Dayeh Shadi Department of Electrical and Computer Engineering University of California San Diego, USA
Prof. Parkinson Patrick School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
Prof. Luca Marta De Marta De Luca Department of Physics University of Basel Klingelbergstrasse 82 4056 Basel, Switzerland


Semiconductor nanowires are considered as building blocks for the next generation electronics and photonics. Their large surface to volume ratio is also attractive for sensing and energy harvesting applications, such as solar cells, photocatalysis. This symposium covers nanowires of a broad range of semiconductors such as group IV, IV-IV, III-V, II-VI, II-V materials, oxides, chalcogenides and their heterostructures. Symposium will focus on recent advances in the nanowire field including nanobelts, nanosheets. Purpose of the symposium is bring together nanowire community to share advances in the field and to enhance collaborations and interactions with industry.


1. Growth, synthesis of 1D nanostructures e.g nanowires, nanobelts and nanosheets, hierarchial structures, e.g. networks, arrays, ternary and quaternary alloys, doping

2. Theory and simulations including growth, properties and devices

3. Structural, electrical, optical, thermal, electrochemical and mechanical properties of nanowires

4. Electronic devices including transistors, sensors, MEMS, memories

5. Optoelectronic devices such as lasers, LEDs, photodetectors, optical switches, nonlinear optical devices, plasmonics

6. Energy harvesting devices such as solar cells, thermoelectric devices, batteries, photocatalysis

7. Sensors and actuators such as chemical, biomedical, environmental sensors, sensors for internet of things, MEMS sensors, microfluidics

8. Biological applications including neural probes, cell stimulation, cell growth

9. Assembly and integration of nanowires, hybrid organic and inorganic nanowires for flexible electronics

Keynote Speakers & Invited Speakers (tentative)

Prof. Yasuhiko Arakawa The University of Tokyo, Japan
Prof. Eric Bakkers TU Eindhoven, Netherlands
Prof. Sonia Conesa-Boj TU Delft, Netherlands
Prof. Kimberly Dick Lund University, Sweden
Prof. Vladimir Dubrovskii Ioffe Institute, Russia
Advances in theory of III-V nanowire growth
Prof. Sergey Frolov Univ. Pittisburgh, US
Dr. Hannah Joyce Cambridge University, United Kingdom
Dr. Kenichi Kawaguchi Fujitsu Lab.& The University of Tokyo
III-V nanowires for RF energy harvesting
Prof. Xiuling Li University of Illinois Urbana Champaign, US
Prof. Paul McIntyre Stanford University, US
Nanowire Structure, Luminescence Characteristics and Carrier Dynamics in the SiGe, Ge and GeSn Systems
Prof. Won Il Park Hanyang University, South Korea
Prof. Antonio Polimeni University of Rome, Italy
Dr. Ricardo Rurali Institut de Ciència de Materials de Barcelona, Spain
Prof. Hadas Shtrikman Weizmann Institute, Israel
Prof. Katsuhiro Tomioka Hokkaido University, Japan
Vertical III-V nanowires on Si and transistor applications
Prof. Takashi Yanagida Kyusyu University, Japan
Prof. Peidong Yang UC Berkeley, US
Dr. Jinkyoung Yoo Los Alamos National Laboratory, US
Dr. Guoqiang Zhang NTT Basic Research Lab, Japan
InP/InAs heterostructure nanowires by self-catalyzed vapor-liquid-solid mode